Drain to Source Voltage;250V/Gate Charge(Qg);47nC@10V/Type;N-Channel/Pd - Power Dissipation;60W/RDS(on);160mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);20A/Gate Threshold Voltage (Vgs(th));4.5V250V 160mΩ@10V 60W Single FETs,... Read more

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