RENESAS-Single FETs, MOSFETs-HAT1095C-EL-E

Description

Drain to Source Voltage;12V/Gate Charge(Qg);3.8nC@4.5V/Type;P-Channel/Pd - Power Dissipation;830mW/RDS(on);140mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);45pF/Current - Continuous Drain(Id);2A/Gate Threshold Voltage (Vgs(th));1.2V/Ciss-Input Capacitance;290pF


12V 140mΩ@4.5V 830mW Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;12V/Gate Charge(Qg);3.8nC@4.5V/Type;P-Channel/Pd - Power Dissipation;830mW/RDS(on);140mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);45pF/Current - Continuous Drain(Id);2A/Gate Threshold Voltage (Vgs(th));1.2V/Ciss-Input Capacitance;290pF12V... Read more

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    Description

    Drain to Source Voltage;12V/Gate Charge(Qg);3.8nC@4.5V/Type;P-Channel/Pd - Power Dissipation;830mW/RDS(on);140mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);45pF/Current - Continuous Drain(Id);2A/Gate Threshold Voltage (Vgs(th));1.2V/Ciss-Input Capacitance;290pF


    12V 140mΩ@4.5V 830mW Single FETs, MOSFETs RoHS

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