RENESAS-Single FETs, MOSFETs-HAT2201WP-EL-E

Description

Drain to Source Voltage;100V/Gate Charge(Qg);21nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;15W/RDS(on);43mΩ@10V/Operating Temperature -;-40℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);65pF/Current - Continuous Drain(Id);15A/Gate Threshold Voltage (Vgs(th));5V/Ciss-Input Capacitance;1.45nF


100V 43mΩ@10V 1 N-channel 15W WPAK-8 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;100V/Gate Charge(Qg);21nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;15W/RDS(on);43mΩ@10V/Operating Temperature -;-40℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);65pF/Current - Continuous Drain(Id);15A/Gate Threshold Voltage (Vgs(th));5V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;100V/Gate Charge(Qg);21nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;15W/RDS(on);43mΩ@10V/Operating Temperature -;-40℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);65pF/Current - Continuous Drain(Id);15A/Gate Threshold Voltage (Vgs(th));5V/Ciss-Input Capacitance;1.45nF


    100V 43mΩ@10V 1 N-channel 15W WPAK-8 Single FETs, MOSFETs RoHS

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