RENESAS-Single FETs, MOSFETs-N0604N-S19-AY

Description

Drain to Source Voltage;60V/Gate Charge(Qg);75nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;116W/RDS(on);6.5mΩ@10V/Reverse Transfer Capacitance (Crss@Vds);165pF/Current - Continuous Drain(Id);82A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;4.15nF/Output Capacitance(Coss);310pF


60V 6.5mΩ@10V 1 N-channel 116W TO-220 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);75nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;116W/RDS(on);6.5mΩ@10V/Reverse Transfer Capacitance (Crss@Vds);165pF/Current - Continuous Drain(Id);82A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;4.15nF/Output Capacitance(Coss);310pF60V... Read more

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);75nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;116W/RDS(on);6.5mΩ@10V/Reverse Transfer Capacitance (Crss@Vds);165pF/Current - Continuous Drain(Id);82A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;4.15nF/Output Capacitance(Coss);310pF


    60V 6.5mΩ@10V 1 N-channel 116W TO-220 Single FETs, MOSFETs RoHS

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