RENESAS-Single FETs, MOSFETs-NE3511S02-T1C-A

Description

Drain to Source Voltage;4V/Type;N-Channel/Pd - Power Dissipation;165mW/Operating Temperature -;-65℃~+125℃/Current - Continuous Drain(Id);20mA/Gate Threshold Voltage (Vgs(th));1.7V


4V 165mW SMD-4P Single FETs, MOSFETs RoHS

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Drain to Source Voltage;4V/Type;N-Channel/Pd - Power Dissipation;165mW/Operating Temperature -;-65℃~+125℃/Current - Continuous Drain(Id);20mA/Gate Threshold Voltage (Vgs(th));1.7V4V 165mW SMD-4P Single FETs, MOSFETs... Read more

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    Description

    Drain to Source Voltage;4V/Type;N-Channel/Pd - Power Dissipation;165mW/Operating Temperature -;-65℃~+125℃/Current - Continuous Drain(Id);20mA/Gate Threshold Voltage (Vgs(th));1.7V


    4V 165mW SMD-4P Single FETs, MOSFETs RoHS

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