RENESAS-Single FETs, MOSFETs-NP100N04PUK-E1-AY

Description

Drain to Source Voltage;40V/Gate Charge(Qg);120nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;176W/RDS(on);2.3mΩ@10V/Operating Temperature -;-40℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);490pF/Current - Continuous Drain(Id);100A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;7.05nF


40V 2.3mΩ@10V 1 N-channel 176W TO-263 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;40V/Gate Charge(Qg);120nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;176W/RDS(on);2.3mΩ@10V/Operating Temperature -;-40℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);490pF/Current - Continuous Drain(Id);100A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;40V/Gate Charge(Qg);120nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;176W/RDS(on);2.3mΩ@10V/Operating Temperature -;-40℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);490pF/Current - Continuous Drain(Id);100A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;7.05nF


    40V 2.3mΩ@10V 1 N-channel 176W TO-263 Single FETs, MOSFETs RoHS

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