RENESAS-Single FETs, MOSFETs-NP109N04PUK-E1-AY

Description

Drain to Source Voltage;40V/Gate Charge(Qg);189nC@10V/Number;1 N-channel/Pd - Power Dissipation;1.8W;250W/RDS(on);1.75mΩ@10V/Operating Temperature -;-55℃~+175℃/Current - Continuous Drain(Id);110A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;10.8nF


40V 1.75mΩ@10V 1 N-channel TO-263(D2PAk) Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;40V/Gate Charge(Qg);189nC@10V/Number;1 N-channel/Pd - Power Dissipation;1.8W;250W/RDS(on);1.75mΩ@10V/Operating Temperature -;-55℃~+175℃/Current - Continuous Drain(Id);110A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;10.8nF40V 1.75mΩ@10V 1... Read more

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    Description

    Drain to Source Voltage;40V/Gate Charge(Qg);189nC@10V/Number;1 N-channel/Pd - Power Dissipation;1.8W;250W/RDS(on);1.75mΩ@10V/Operating Temperature -;-55℃~+175℃/Current - Continuous Drain(Id);110A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;10.8nF


    40V 1.75mΩ@10V 1 N-channel TO-263(D2PAk) Single FETs, MOSFETs RoHS

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