RENESAS-Single FETs, MOSFETs-NP20P04SLG-E1-AY

Description

Drain to Source Voltage;40V/Gate Charge(Qg);34nC@32V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;38W/RDS(on);38mΩ@4.5V/Operating Temperature -;-40℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);175pF/Current - Continuous Drain(Id);20A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;1.65nF


40V 38mΩ@4.5V 1 P-Channel 38W TO-252(MP-3ZK) Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;40V/Gate Charge(Qg);34nC@32V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;38W/RDS(on);38mΩ@4.5V/Operating Temperature -;-40℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);175pF/Current - Continuous Drain(Id);20A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;40V/Gate Charge(Qg);34nC@32V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;38W/RDS(on);38mΩ@4.5V/Operating Temperature -;-40℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);175pF/Current - Continuous Drain(Id);20A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;1.65nF


    40V 38mΩ@4.5V 1 P-Channel 38W TO-252(MP-3ZK) Single FETs, MOSFETs RoHS

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