RENESAS-Single FETs, MOSFETs-NP20P06YLG-E1-AY

Description

Drain to Source Voltage;60V/Gate Charge(Qg);51nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;57W/RDS(on);47mΩ@10V/Operating Temperature -;-40℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);173pF/Current - Continuous Drain(Id);20A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;2.407nF/Output Capacitance(Coss);225pF


60V 47mΩ@10V 1 P-Channel 57W HSON-8 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);51nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;57W/RDS(on);47mΩ@10V/Operating Temperature -;-40℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);173pF/Current - Continuous Drain(Id);20A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);51nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;57W/RDS(on);47mΩ@10V/Operating Temperature -;-40℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);173pF/Current - Continuous Drain(Id);20A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;2.407nF/Output Capacitance(Coss);225pF


    60V 47mΩ@10V 1 P-Channel 57W HSON-8 Single FETs, MOSFETs RoHS

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