RENESAS-Single FETs, MOSFETs-NP23N06YDG-E1-AY

Description

Drain to Source Voltage;60V/Gate Charge(Qg);41nC@10V/Number;1 N-channel/Pd - Power Dissipation;1W;60W/RDS(on);27mΩ@10V/Operating Temperature -;-55℃~+175℃/Current - Continuous Drain(Id);23A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;1.8nF


60V 27mΩ@10V 1 N-channel HSON-8 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);41nC@10V/Number;1 N-channel/Pd - Power Dissipation;1W;60W/RDS(on);27mΩ@10V/Operating Temperature -;-55℃~+175℃/Current - Continuous Drain(Id);23A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;1.8nF60V 27mΩ@10V 1... Read more

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);41nC@10V/Number;1 N-channel/Pd - Power Dissipation;1W;60W/RDS(on);27mΩ@10V/Operating Temperature -;-55℃~+175℃/Current - Continuous Drain(Id);23A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;1.8nF


    60V 27mΩ@10V 1 N-channel HSON-8 Single FETs, MOSFETs RoHS

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