RENESAS-Single FETs, MOSFETs-NP35N04YUG-E1-AY

Description

Drain to Source Voltage;40V/Gate Charge(Qg);54nC@10V/Number;1 N-channel/Pd - Power Dissipation;1W;77W/RDS(on);10mΩ@10V/Operating Temperature -;-40℃~+175℃/Current - Continuous Drain(Id);35A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;2.85nF


40V 10mΩ@10V 1 N-channel HSON-8 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;40V/Gate Charge(Qg);54nC@10V/Number;1 N-channel/Pd - Power Dissipation;1W;77W/RDS(on);10mΩ@10V/Operating Temperature -;-40℃~+175℃/Current - Continuous Drain(Id);35A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;2.85nF40V 10mΩ@10V 1... Read more

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    Description

    Drain to Source Voltage;40V/Gate Charge(Qg);54nC@10V/Number;1 N-channel/Pd - Power Dissipation;1W;77W/RDS(on);10mΩ@10V/Operating Temperature -;-40℃~+175℃/Current - Continuous Drain(Id);35A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;2.85nF


    40V 10mΩ@10V 1 N-channel HSON-8 Single FETs, MOSFETs RoHS

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