RENESAS-Single FETs, MOSFETs-NP36P06KDG-E1-AY

Description

Drain to Source Voltage;60V/Gate Charge(Qg);54nC@10V/Number;1 P-Channel/Pd - Power Dissipation;1.8W;56W/RDS(on);29.5mΩ@10V/Operating Temperature -;-55℃~+175℃/Current - Continuous Drain(Id);36A/Ciss-Input Capacitance;3.1nF


60V 29.5mΩ@10V 1 P-Channel TO-263 Single FETs, MOSFETs RoHS

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Drain to Source Voltage;60V/Gate Charge(Qg);54nC@10V/Number;1 P-Channel/Pd - Power Dissipation;1.8W;56W/RDS(on);29.5mΩ@10V/Operating Temperature -;-55℃~+175℃/Current - Continuous Drain(Id);36A/Ciss-Input Capacitance;3.1nF60V 29.5mΩ@10V 1 P-Channel TO-263 Single... Read more

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);54nC@10V/Number;1 P-Channel/Pd - Power Dissipation;1.8W;56W/RDS(on);29.5mΩ@10V/Operating Temperature -;-55℃~+175℃/Current - Continuous Drain(Id);36A/Ciss-Input Capacitance;3.1nF


    60V 29.5mΩ@10V 1 P-Channel TO-263 Single FETs, MOSFETs RoHS

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