RENESAS-Single FETs, MOSFETs-NP36P06SLG-E1-AY

Description

Drain to Source Voltage;60V/Gate Charge(Qg);52nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;1.2W;56W/RDS(on);30mΩ@10V/Reverse Transfer Capacitance (Crss@Vds);205pF/Current - Continuous Drain(Id);36A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;3.2nF/Output Capacitance(Coss);350pF


60V 30mΩ@10V 1 P-Channel TO-252 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);52nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;1.2W;56W/RDS(on);30mΩ@10V/Reverse Transfer Capacitance (Crss@Vds);205pF/Current - Continuous Drain(Id);36A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;3.2nF/Output Capacitance(Coss);350pF60V... Read more

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);52nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;1.2W;56W/RDS(on);30mΩ@10V/Reverse Transfer Capacitance (Crss@Vds);205pF/Current - Continuous Drain(Id);36A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;3.2nF/Output Capacitance(Coss);350pF


    60V 30mΩ@10V 1 P-Channel TO-252 Single FETs, MOSFETs RoHS

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