RENESAS-Single FETs, MOSFETs-NP50P03YDG-E1-AY

Description

Drain to Source Voltage;30V/Gate Charge(Qg);96nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;102W/RDS(on);8.4mΩ@10V/Reverse Transfer Capacitance (Crss@Vds);580pF/Current - Continuous Drain(Id);50A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;3.5nF/Output Capacitance(Coss);660pF


30V 8.4mΩ@10V 1 P-Channel 102W HSON-8 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);96nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;102W/RDS(on);8.4mΩ@10V/Reverse Transfer Capacitance (Crss@Vds);580pF/Current - Continuous Drain(Id);50A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;3.5nF/Output Capacitance(Coss);660pF30V... Read more

$3.51 Excl. VAT

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);96nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;102W/RDS(on);8.4mΩ@10V/Reverse Transfer Capacitance (Crss@Vds);580pF/Current - Continuous Drain(Id);50A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;3.5nF/Output Capacitance(Coss);660pF


    30V 8.4mΩ@10V 1 P-Channel 102W HSON-8 Single FETs, MOSFETs RoHS

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