RENESAS-Single FETs, MOSFETs-NP50P06KDG-E1-AY

Description

Drain to Source Voltage;60V/Gate Charge(Qg);95nC@48V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;90W/RDS(on);23mΩ@4.5V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);300pF/Current - Continuous Drain(Id);50A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;5nF


60V 23mΩ@4.5V 1 P-Channel 90W TO-263 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);95nC@48V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;90W/RDS(on);23mΩ@4.5V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);300pF/Current - Continuous Drain(Id);50A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);95nC@48V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;90W/RDS(on);23mΩ@4.5V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);300pF/Current - Continuous Drain(Id);50A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;5nF


    60V 23mΩ@4.5V 1 P-Channel 90W TO-263 Single FETs, MOSFETs RoHS

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