RENESAS-Single FETs, MOSFETs-NP60N04VDK-E1-AY

Description

Drain to Source Voltage;40V/Gate Charge(Qg);63nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;105W/RDS(on);3.85mΩ@10V/Reverse Transfer Capacitance (Crss@Vds);260pF/Current - Continuous Drain(Id);60A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;3.68nF/Output Capacitance(Coss);510pF


40V 3.85mΩ@10V 1 N-channel 105W TO-252(MP-3ZP) Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;40V/Gate Charge(Qg);63nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;105W/RDS(on);3.85mΩ@10V/Reverse Transfer Capacitance (Crss@Vds);260pF/Current - Continuous Drain(Id);60A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;3.68nF/Output Capacitance(Coss);510pF40V... Read more

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    Description

    Drain to Source Voltage;40V/Gate Charge(Qg);63nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;105W/RDS(on);3.85mΩ@10V/Reverse Transfer Capacitance (Crss@Vds);260pF/Current - Continuous Drain(Id);60A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;3.68nF/Output Capacitance(Coss);510pF


    40V 3.85mΩ@10V 1 N-channel 105W TO-252(MP-3ZP) Single FETs, MOSFETs RoHS

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