RENESAS-Single FETs, MOSFETs-NP75N04YUG-E1-AY

Description

Drain to Source Voltage;40V/Gate Charge(Qg);116nC@10V/Number;1 N-channel/Pd - Power Dissipation;1W;138W/RDS(on);4.8mΩ@10V/Operating Temperature -;-40℃~+175℃/Current - Continuous Drain(Id);75A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;6.45nF


40V 4.8mΩ@10V 1 N-channel HSON-8 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;40V/Gate Charge(Qg);116nC@10V/Number;1 N-channel/Pd - Power Dissipation;1W;138W/RDS(on);4.8mΩ@10V/Operating Temperature -;-40℃~+175℃/Current - Continuous Drain(Id);75A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;6.45nF40V 4.8mΩ@10V 1... Read more

$8.70 Excl. VAT

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    Description

    Drain to Source Voltage;40V/Gate Charge(Qg);116nC@10V/Number;1 N-channel/Pd - Power Dissipation;1W;138W/RDS(on);4.8mΩ@10V/Operating Temperature -;-40℃~+175℃/Current - Continuous Drain(Id);75A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;6.45nF


    40V 4.8mΩ@10V 1 N-channel HSON-8 Single FETs, MOSFETs RoHS

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