RENESAS-Single FETs, MOSFETs-RJK1002DPN-A0#T2

Description

Drain to Source Voltage;100V/Gate Charge(Qg);94nC/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;150W/RDS(on);7.6mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);240pF/Current - Continuous Drain(Id);70A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;6.45nF


100V 7.6mΩ@10V 1 N-channel 150W TO-220FPA Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;100V/Gate Charge(Qg);94nC/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;150W/RDS(on);7.6mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);240pF/Current - Continuous Drain(Id);70A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;100V/Gate Charge(Qg);94nC/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;150W/RDS(on);7.6mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);240pF/Current - Continuous Drain(Id);70A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;6.45nF


    100V 7.6mΩ@10V 1 N-channel 150W TO-220FPA Single FETs, MOSFETs RoHS

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