RENESAS-Single FETs, MOSFETs-RJK60S7DPP-E0#T2

Description

Drain to Source Voltage;600V/Gate Charge(Qg);39nC@10V/Number;1 N-channel/Pd - Power Dissipation;34.7W/RDS(on);125mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);30A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;2.3nF


600V 125mΩ@10V 1 N-channel 34.7W TO-220FP Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;600V/Gate Charge(Qg);39nC@10V/Number;1 N-channel/Pd - Power Dissipation;34.7W/RDS(on);125mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);30A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;2.3nF600V 125mΩ@10V 1... Read more

$45.00 Excl. VAT

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    Description

    Drain to Source Voltage;600V/Gate Charge(Qg);39nC@10V/Number;1 N-channel/Pd - Power Dissipation;34.7W/RDS(on);125mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);30A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;2.3nF


    600V 125mΩ@10V 1 N-channel 34.7W TO-220FP Single FETs, MOSFETs RoHS

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