RENESAS-Single FETs, MOSFETs-TP65H035G4WS

Description

Drain to Source Voltage;650V/Gate Charge(Qg);22nC/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;156W/RDS(on);35mΩ/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);5pF/Current - Continuous Drain(Id);46A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;1500pF/Output Capacitance(Coss);147pF


650V 35mΩ 1 N-channel 156W TO-247 Single FETs, MOSFETs RoHS

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Drain to Source Voltage;650V/Gate Charge(Qg);22nC/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;156W/RDS(on);35mΩ/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);5pF/Current - Continuous Drain(Id);46A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input... Read more

$49.86 Excl. VAT

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    Description

    Drain to Source Voltage;650V/Gate Charge(Qg);22nC/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;156W/RDS(on);35mΩ/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);5pF/Current - Continuous Drain(Id);46A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;1500pF/Output Capacitance(Coss);147pF


    650V 35mΩ 1 N-channel 156W TO-247 Single FETs, MOSFETs RoHS

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