RENESAS-Single FETs, MOSFETs-TP65H100G4PS

Description

Drain to Source Voltage;650V/Gate Charge(Qg);14.4nC/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;65.8W/RDS(on);92mΩ/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);3.6pF/Current - Continuous Drain(Id);18.9A/Gate Threshold Voltage (Vgs(th));3.65V/Ciss-Input Capacitance;818pF/Output Capacitance(Coss);53pF


650V 92mΩ 1 N-channel 65.8W TO-220 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;650V/Gate Charge(Qg);14.4nC/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;65.8W/RDS(on);92mΩ/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);3.6pF/Current - Continuous Drain(Id);18.9A/Gate Threshold Voltage (Vgs(th));3.65V/Ciss-Input... Read more

$17.85 Excl. VAT

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    Description

    Drain to Source Voltage;650V/Gate Charge(Qg);14.4nC/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;65.8W/RDS(on);92mΩ/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);3.6pF/Current - Continuous Drain(Id);18.9A/Gate Threshold Voltage (Vgs(th));3.65V/Ciss-Input Capacitance;818pF/Output Capacitance(Coss);53pF


    650V 92mΩ 1 N-channel 65.8W TO-220 Single FETs, MOSFETs RoHS

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