RENESAS-Single FETs, MOSFETs-UPA1917TE-T1-AT

Description

Drain to Source Voltage;20V/Gate Charge(Qg);8.1nC@4V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;2W/RDS(on);107mΩ@1.8V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);66pF/Current - Continuous Drain(Id);6A/Gate Threshold Voltage (Vgs(th));1.5V/Ciss-Input Capacitance;835pF


20V 107mΩ@1.8V 1 P-Channel 2W SC-95-6 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;20V/Gate Charge(Qg);8.1nC@4V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;2W/RDS(on);107mΩ@1.8V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);66pF/Current - Continuous Drain(Id);6A/Gate Threshold Voltage (Vgs(th));1.5V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;20V/Gate Charge(Qg);8.1nC@4V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;2W/RDS(on);107mΩ@1.8V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);66pF/Current - Continuous Drain(Id);6A/Gate Threshold Voltage (Vgs(th));1.5V/Ciss-Input Capacitance;835pF


    20V 107mΩ@1.8V 1 P-Channel 2W SC-95-6 Single FETs, MOSFETs RoHS

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