Drain to Source Voltage;30V/Gate Charge(Qg);133nC@10V/Number;1 P-Channel/Pd - Power Dissipation;1.5W/RDS(on);3.7mΩ@10V/Current - Continuous Drain(Id);40A/Ciss-Input Capacitance;3.28nF30V 3.7mΩ@10V 1 P-Channel 1.5W DFN3333-8(3.3x3.3) Single FETs,... Read more

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