RENESAS-Single FETs, MOSFETs-UPA2766T1A-E2-AY

Description

Drain to Source Voltage;30V/Gate Charge(Qg);257nC@10V/Number;1 N-channel/Pd - Power Dissipation;1.5W;83W/RDS(on);1.82mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);130A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;10.85nF


30V 1.82mΩ@4.5V 1 N-channel HVSON-8(5x5.4) Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);257nC@10V/Number;1 N-channel/Pd - Power Dissipation;1.5W;83W/RDS(on);1.82mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);130A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;10.85nF30V 1.82mΩ@4.5V 1... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);257nC@10V/Number;1 N-channel/Pd - Power Dissipation;1.5W;83W/RDS(on);1.82mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);130A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;10.85nF


    30V 1.82mΩ@4.5V 1 N-channel HVSON-8(5x5.4) Single FETs, MOSFETs RoHS

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