RENESAS-Single FETs, MOSFETs-UPA2792GR(0)-E1-AZ

Description

Drain to Source Voltage;30V/Gate Charge(Qg);47nC@10V/Type;N-Channel + P-Channel/Pd - Power Dissipation;2W/RDS(on);26mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);410pF/Current - Continuous Drain(Id);10A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;2.2nF/Output Capacitance(Coss);510pF


30V 26mΩ@4.5V 2W Single FETs, MOSFETs RoHS

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Drain to Source Voltage;30V/Gate Charge(Qg);47nC@10V/Type;N-Channel + P-Channel/Pd - Power Dissipation;2W/RDS(on);26mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);410pF/Current - Continuous Drain(Id);10A/Gate Threshold Voltage... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);47nC@10V/Type;N-Channel + P-Channel/Pd - Power Dissipation;2W/RDS(on);26mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);410pF/Current - Continuous Drain(Id);10A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;2.2nF/Output Capacitance(Coss);510pF


    30V 26mΩ@4.5V 2W Single FETs, MOSFETs RoHS

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