RENESAS-Single FETs, MOSFETs-UPA2826T1S-E2-AT

Description

Drain to Source Voltage;20V/Gate Charge(Qg);37nC@4V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;20W/RDS(on);4.3mΩ@8V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);1.13nF/Current - Continuous Drain(Id);27A/Gate Threshold Voltage (Vgs(th));1.5V/Ciss-Input Capacitance;3.61nF


20V 4.3mΩ@8V 1 N-channel 20W HWSON-8(3.3x3.3) Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;20V/Gate Charge(Qg);37nC@4V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;20W/RDS(on);4.3mΩ@8V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);1.13nF/Current - Continuous Drain(Id);27A/Gate Threshold Voltage (Vgs(th));1.5V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;20V/Gate Charge(Qg);37nC@4V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;20W/RDS(on);4.3mΩ@8V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);1.13nF/Current - Continuous Drain(Id);27A/Gate Threshold Voltage (Vgs(th));1.5V/Ciss-Input Capacitance;3.61nF


    20V 4.3mΩ@8V 1 N-channel 20W HWSON-8(3.3x3.3) Single FETs, MOSFETs RoHS

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