ROHM-Bipolar Transistor Arrays, Pre-Biased-EMF8T2R

Description

Number;1 NPN Pre-Biased, 1 NPN/Collector - Emitter Voltage VCEO;12V/Current - Collector(Ic);500mA/Pd - Power Dissipation;150mW/type;NPN/DC Current Gain;68/Emitter-Base Voltage VEBO;6V/Input Voltage (VI(on)@Ic,Vce);3V@2mA,300mV/Voltage - Input(Max)(VI(off));500mV@100uA,5V/Output Voltage(VO(on));300mV@10mA,500uA/Input Resistor;61.1kΩ/Resistor Ratio;1.2/Vce Saturation(VCE(sat));250mV/Transition frequency(fT);320MHz/Current - Collector Cutoff;100nA


68 150mW 500mA 12V 1 NPN Pre-Biased, 1 NPN SOT-563(SOT-666) Bipolar Transistor Arrays, Pre-Biased RoHS

Product form

Number;1 NPN Pre-Biased, 1 NPN/Collector - Emitter Voltage VCEO;12V/Current - Collector(Ic);500mA/Pd - Power Dissipation;150mW/type;NPN/DC Current Gain;68/Emitter-Base Voltage VEBO;6V/Input Voltage (VI(on)@Ic,Vce);3V@2mA,300mV/Voltage... Read more

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    Description

    Number;1 NPN Pre-Biased, 1 NPN/Collector - Emitter Voltage VCEO;12V/Current - Collector(Ic);500mA/Pd - Power Dissipation;150mW/type;NPN/DC Current Gain;68/Emitter-Base Voltage VEBO;6V/Input Voltage (VI(on)@Ic,Vce);3V@2mA,300mV/Voltage - Input(Max)(VI(off));500mV@100uA,5V/Output Voltage(VO(on));300mV@10mA,500uA/Input Resistor;61.1kΩ/Resistor Ratio;1.2/Vce Saturation(VCE(sat));250mV/Transition frequency(fT);320MHz/Current - Collector Cutoff;100nA


    68 150mW 500mA 12V 1 NPN Pre-Biased, 1 NPN SOT-563(SOT-666) Bipolar Transistor Arrays, Pre-Biased RoHS

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