ROHM-Bipolar Transistor Arrays, Pre-Biased-IMD2AT108

Description

Number;1 NPN Pre-Biased, 1 PNP Pre-Biased/Collector - Emitter Voltage VCEO;50V/Current - Collector(Ic);100mA/Pd - Power Dissipation;300mW/type;NPN+PNP/DC Current Gain;56/Input Voltage (VI(on)@Ic,Vce);3V@5mA,200mV/Voltage - Input(Max)(VI(off));3V/Output Voltage(VO(on));100mV/Input Resistor;22kΩ/Resistor Ratio;1/Operating Temperature;-55℃~+150℃/Transition frequency(fT);250MHz


Pre-Biased Bipolar Transistor (BJT) 50V 100mA 300mW Surface Mount SOT-457

Product form

Number;1 NPN Pre-Biased, 1 PNP Pre-Biased/Collector - Emitter Voltage VCEO;50V/Current - Collector(Ic);100mA/Pd - Power Dissipation;300mW/type;NPN+PNP/DC Current Gain;56/Input Voltage (VI(on)@Ic,Vce);3V@5mA,200mV/Voltage -... Read more

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    Description

    Number;1 NPN Pre-Biased, 1 PNP Pre-Biased/Collector - Emitter Voltage VCEO;50V/Current - Collector(Ic);100mA/Pd - Power Dissipation;300mW/type;NPN+PNP/DC Current Gain;56/Input Voltage (VI(on)@Ic,Vce);3V@5mA,200mV/Voltage - Input(Max)(VI(off));3V/Output Voltage(VO(on));100mV/Input Resistor;22kΩ/Resistor Ratio;1/Operating Temperature;-55℃~+150℃/Transition frequency(fT);250MHz


    Pre-Biased Bipolar Transistor (BJT) 50V 100mA 300mW Surface Mount SOT-457

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