ROHM-Bipolar Transistor Arrays, Pre-Biased-UMB3NTN

Description

Number;2 PNP Pre-Biased Transistors/Collector - Emitter Voltage VCEO;50V/Current - Collector(Ic);100mA/Pd - Power Dissipation;150mW/type;PNP/DC Current Gain;100/Emitter-Base Voltage VEBO;5V/Input Resistor;4.7kΩ/Operating Temperature;-55℃~+150℃/Vce Saturation(VCE(sat));300mV/Transition frequency(fT);250MHz/Current - Collector Cutoff;500nA


Pre-Biased Bipolar Transistor (BJT) 50V 100mA 150mW Surface Mount SOT-363(UMT6)

Product form

Number;2 PNP Pre-Biased Transistors/Collector - Emitter Voltage VCEO;50V/Current - Collector(Ic);100mA/Pd - Power Dissipation;150mW/type;PNP/DC Current Gain;100/Emitter-Base Voltage VEBO;5V/Input Resistor;4.7kΩ/Operating Temperature;-55℃~+150℃/Vce Saturation(VCE(sat));300mV/Transition... Read more

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    Description

    Number;2 PNP Pre-Biased Transistors/Collector - Emitter Voltage VCEO;50V/Current - Collector(Ic);100mA/Pd - Power Dissipation;150mW/type;PNP/DC Current Gain;100/Emitter-Base Voltage VEBO;5V/Input Resistor;4.7kΩ/Operating Temperature;-55℃~+150℃/Vce Saturation(VCE(sat));300mV/Transition frequency(fT);250MHz/Current - Collector Cutoff;500nA


    Pre-Biased Bipolar Transistor (BJT) 50V 100mA 150mW Surface Mount SOT-363(UMT6)

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