ROHM-Bipolar Transistor Arrays, Pre-Biased-UMH11NFHATN

Description

Number;2 NPN (Pre-Biased)/Collector - Emitter Voltage VCEO;50V/Current - Collector(Ic);100mA/Pd - Power Dissipation;150mW/type;NPN/DC Current Gain;30/Input Voltage (VI(on)@Ic,Vce);3V/Voltage - Input(Max)(VI(off));500mV@100uA,5V/Output Voltage(VO(on));100mV/Input Resistor;10kΩ/Resistor Ratio;1/Operating Temperature;-40℃~+150℃/Transition frequency(fT);250MHz


Pre-Biased Bipolar Transistor (BJT) 50V 100mA 150mW Surface Mount SOT-363

Product form

Number;2 NPN (Pre-Biased)/Collector - Emitter Voltage VCEO;50V/Current - Collector(Ic);100mA/Pd - Power Dissipation;150mW/type;NPN/DC Current Gain;30/Input Voltage (VI(on)@Ic,Vce);3V/Voltage - Input(Max)(VI(off));500mV@100uA,5V/Output Voltage(VO(on));100mV/Input Resistor;10kΩ/Resistor... Read more

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    Description

    Number;2 NPN (Pre-Biased)/Collector - Emitter Voltage VCEO;50V/Current - Collector(Ic);100mA/Pd - Power Dissipation;150mW/type;NPN/DC Current Gain;30/Input Voltage (VI(on)@Ic,Vce);3V/Voltage - Input(Max)(VI(off));500mV@100uA,5V/Output Voltage(VO(on));100mV/Input Resistor;10kΩ/Resistor Ratio;1/Operating Temperature;-40℃~+150℃/Transition frequency(fT);250MHz


    Pre-Biased Bipolar Transistor (BJT) 50V 100mA 150mW Surface Mount SOT-363

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