ROHM-Single FETs, MOSFETs-R6015KNX

Description

Drain to Source Voltage;600V/Gate Charge(Qg);27.5nC@10V/Number;1 N-channel/Pd - Power Dissipation;60W/RDS(on);290mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);40pF/Current - Continuous Drain(Id);15A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;1.05nF


N-Channel 600V 15A 60W Through Hole TO-220FM

Product form

Drain to Source Voltage;600V/Gate Charge(Qg);27.5nC@10V/Number;1 N-channel/Pd - Power Dissipation;60W/RDS(on);290mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);40pF/Current - Continuous Drain(Id);15A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;600V/Gate Charge(Qg);27.5nC@10V/Number;1 N-channel/Pd - Power Dissipation;60W/RDS(on);290mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);40pF/Current - Continuous Drain(Id);15A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;1.05nF


    N-Channel 600V 15A 60W Through Hole TO-220FM

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