ROHM-Single FETs, MOSFETs-R6047ENZ4C13

Description

Drain to Source Voltage;600V/Gate Charge(Qg);145nC@10V/Number;1 N-channel/Pd - Power Dissipation;481W/RDS(on);72mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);320pF/Current - Continuous Drain(Id);47A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;3.85nF/Output Capacitance(Coss);2.95nF


N-Channel 600V 47A 481W Through Hole TO-247

Product form

Drain to Source Voltage;600V/Gate Charge(Qg);145nC@10V/Number;1 N-channel/Pd - Power Dissipation;481W/RDS(on);72mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);320pF/Current - Continuous Drain(Id);47A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;600V/Gate Charge(Qg);145nC@10V/Number;1 N-channel/Pd - Power Dissipation;481W/RDS(on);72mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);320pF/Current - Continuous Drain(Id);47A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;3.85nF/Output Capacitance(Coss);2.95nF


    N-Channel 600V 47A 481W Through Hole TO-247

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