ROHM-Single FETs, MOSFETs-R6530KNX3C16

Description

Drain to Source Voltage;650V/Gate Charge(Qg);56nC@10V/Number;1 N-channel/Pd - Power Dissipation;307W/RDS(on);140mΩ@10V/Current - Continuous Drain(Id);30A/Gate Threshold Voltage (Vgs(th));5V/Ciss-Input Capacitance;2.35nF


650V 140mΩ@10V 1 N-channel 307W TO-220AB Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;650V/Gate Charge(Qg);56nC@10V/Number;1 N-channel/Pd - Power Dissipation;307W/RDS(on);140mΩ@10V/Current - Continuous Drain(Id);30A/Gate Threshold Voltage (Vgs(th));5V/Ciss-Input Capacitance;2.35nF650V 140mΩ@10V 1 N-channel 307W... Read more

$6.09 Excl. VAT

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    Description

    Drain to Source Voltage;650V/Gate Charge(Qg);56nC@10V/Number;1 N-channel/Pd - Power Dissipation;307W/RDS(on);140mΩ@10V/Current - Continuous Drain(Id);30A/Gate Threshold Voltage (Vgs(th));5V/Ciss-Input Capacitance;2.35nF


    650V 140mΩ@10V 1 N-channel 307W TO-220AB Single FETs, MOSFETs RoHS

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