ROHM-Single FETs, MOSFETs-R8009KNXC7G

Description

Drain to Source Voltage;800V/Gate Charge(Qg);27nC@400V/Number;1 N-channel/Pd - Power Dissipation;59W/RDS(on);600mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);12pF/Current - Continuous Drain(Id);9A/Gate Threshold Voltage (Vgs(th));4.5V/Ciss-Input Capacitance;900pF/Output Capacitance(Coss);60pF


N-Channel 800V 9A 59W Through Hole TO-220FM

Product form

Drain to Source Voltage;800V/Gate Charge(Qg);27nC@400V/Number;1 N-channel/Pd - Power Dissipation;59W/RDS(on);600mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);12pF/Current - Continuous Drain(Id);9A/Gate Threshold Voltage (Vgs(th));4.5V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;800V/Gate Charge(Qg);27nC@400V/Number;1 N-channel/Pd - Power Dissipation;59W/RDS(on);600mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);12pF/Current - Continuous Drain(Id);9A/Gate Threshold Voltage (Vgs(th));4.5V/Ciss-Input Capacitance;900pF/Output Capacitance(Coss);60pF


    N-Channel 800V 9A 59W Through Hole TO-220FM

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