ROHM-Single FETs, MOSFETs-RCX160N20

Description

Drain to Source Voltage;200V/Gate Charge(Qg);26nC@10V/Number;1 N-channel/Pd - Power Dissipation;2.23W;40W/RDS(on);180mΩ@10V/Current - Continuous Drain(Id);16A/Gate Threshold Voltage (Vgs(th));5.25V/Ciss-Input Capacitance;1.37nF


N-Channel 200V 16A 2.23W 40W Through Hole TO-220FM

Product form

Drain to Source Voltage;200V/Gate Charge(Qg);26nC@10V/Number;1 N-channel/Pd - Power Dissipation;2.23W;40W/RDS(on);180mΩ@10V/Current - Continuous Drain(Id);16A/Gate Threshold Voltage (Vgs(th));5.25V/Ciss-Input Capacitance;1.37nFN-Channel 200V 16A 2.23W 40W... Read more

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    Description

    Drain to Source Voltage;200V/Gate Charge(Qg);26nC@10V/Number;1 N-channel/Pd - Power Dissipation;2.23W;40W/RDS(on);180mΩ@10V/Current - Continuous Drain(Id);16A/Gate Threshold Voltage (Vgs(th));5.25V/Ciss-Input Capacitance;1.37nF


    N-Channel 200V 16A 2.23W 40W Through Hole TO-220FM

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