ROHM-Single FETs, MOSFETs-RD3T100CNTL1

Description

Drain to Source Voltage;200V/Gate Charge(Qg);25nC@10V/Number;1 N-channel/Pd - Power Dissipation;85W/RDS(on);182mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);10A/Gate Threshold Voltage (Vgs(th));5.25V/Ciss-Input Capacitance;1.4nF


200V 182mΩ@10V 1 N-channel 85W TO-252 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;200V/Gate Charge(Qg);25nC@10V/Number;1 N-channel/Pd - Power Dissipation;85W/RDS(on);182mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);10A/Gate Threshold Voltage (Vgs(th));5.25V/Ciss-Input Capacitance;1.4nF200V 182mΩ@10V 1... Read more

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    Description

    Drain to Source Voltage;200V/Gate Charge(Qg);25nC@10V/Number;1 N-channel/Pd - Power Dissipation;85W/RDS(on);182mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);10A/Gate Threshold Voltage (Vgs(th));5.25V/Ciss-Input Capacitance;1.4nF


    200V 182mΩ@10V 1 N-channel 85W TO-252 Single FETs, MOSFETs RoHS

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