ROHM-Single FETs, MOSFETs-RE1C002ZPTL

Description

Drain to Source Voltage;20V/Gate Charge(Qg);1.4nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;150mW/RDS(on);1.2Ω@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);200mA/Gate Threshold Voltage (Vgs(th));300mV/Ciss-Input Capacitance;115pF


P-Channel 20V 200mA 150mW Surface Mount SOT-416F

Product form

Drain to Source Voltage;20V/Gate Charge(Qg);1.4nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;150mW/RDS(on);1.2Ω@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);200mA/Gate Threshold Voltage (Vgs(th));300mV/Ciss-Input Capacitance;115pFP-Channel 20V 200mA... Read more

$1.71 Excl. VAT

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    Description

    Drain to Source Voltage;20V/Gate Charge(Qg);1.4nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;150mW/RDS(on);1.2Ω@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);200mA/Gate Threshold Voltage (Vgs(th));300mV/Ciss-Input Capacitance;115pF


    P-Channel 20V 200mA 150mW Surface Mount SOT-416F

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