ROHM-Single FETs, MOSFETs-RQ1E070RPTR

Description

Drain to Source Voltage;30V/Gate Charge(Qg);26nC@10V/Number;1 P-Channel/Pd - Power Dissipation;1.5W/RDS(on);17mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);350pF/Current - Continuous Drain(Id);7A/Ciss-Input Capacitance;2.7nF


30V 17mΩ@4.5V 1 P-Channel 1.5W TSMT-8 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);26nC@10V/Number;1 P-Channel/Pd - Power Dissipation;1.5W/RDS(on);17mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);350pF/Current - Continuous Drain(Id);7A/Ciss-Input Capacitance;2.7nF30V 17mΩ@4.5V 1... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);26nC@10V/Number;1 P-Channel/Pd - Power Dissipation;1.5W/RDS(on);17mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);350pF/Current - Continuous Drain(Id);7A/Ciss-Input Capacitance;2.7nF


    30V 17mΩ@4.5V 1 P-Channel 1.5W TSMT-8 Single FETs, MOSFETs RoHS

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