ROHM-Single FETs, MOSFETs-RQ3G110ATTB

Description

Drain to Source Voltage;40V/Gate Charge(Qg);46nC@10V/Number;1 P-Channel/Pd - Power Dissipation;20W/RDS(on);9.8mΩ@10V;12.3mΩ@4.5V/Reverse Transfer Capacitance (Crss@Vds);250pF/Current - Continuous Drain(Id);35A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;2.75nF/Output Capacitance(Coss);395pF


P-Channel 40V 35A 20W Surface Mount HSMT-8(3.2x3)

Product form

Drain to Source Voltage;40V/Gate Charge(Qg);46nC@10V/Number;1 P-Channel/Pd - Power Dissipation;20W/RDS(on);9.8mΩ@10V;12.3mΩ@4.5V/Reverse Transfer Capacitance (Crss@Vds);250pF/Current - Continuous Drain(Id);35A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;2.75nF/Output Capacitance(Coss);395pFP-Channel... Read more

$4.35 Excl. VAT

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    Description

    Drain to Source Voltage;40V/Gate Charge(Qg);46nC@10V/Number;1 P-Channel/Pd - Power Dissipation;20W/RDS(on);9.8mΩ@10V;12.3mΩ@4.5V/Reverse Transfer Capacitance (Crss@Vds);250pF/Current - Continuous Drain(Id);35A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;2.75nF/Output Capacitance(Coss);395pF


    P-Channel 40V 35A 20W Surface Mount HSMT-8(3.2x3)

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