ROHM-Single FETs, MOSFETs-RQ3L050GNTB

Description

Drain to Source Voltage;60V/Gate Charge(Qg);2.8nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;14.8W/RDS(on);61mΩ@10V/Current - Continuous Drain(Id);12A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;300pF


60V 61mΩ@10V 1 N-channel 14.8W HSMT-8(3.2x3) Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);2.8nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;14.8W/RDS(on);61mΩ@10V/Current - Continuous Drain(Id);12A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;300pF60V 61mΩ@10V 1 N-channel 14.8W... Read more

$3.42 Excl. VAT

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);2.8nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;14.8W/RDS(on);61mΩ@10V/Current - Continuous Drain(Id);12A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;300pF


    60V 61mΩ@10V 1 N-channel 14.8W HSMT-8(3.2x3) Single FETs, MOSFETs RoHS

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