ROHM-Single FETs, MOSFETs-RQ6A050ZPTR

Description

Drain to Source Voltage;12V/Gate Charge(Qg);35nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;950mW/RDS(on);26mΩ@4.5V/Reverse Transfer Capacitance (Crss@Vds);320pF/Current - Continuous Drain(Id);5A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;2.85nF/Output Capacitance(Coss);350pF


12V 26mΩ@4.5V 1 P-Channel 950mW TSMT6(SC-95) Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;12V/Gate Charge(Qg);35nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;950mW/RDS(on);26mΩ@4.5V/Reverse Transfer Capacitance (Crss@Vds);320pF/Current - Continuous Drain(Id);5A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;2.85nF/Output Capacitance(Coss);350pF12V... Read more

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    Description

    Drain to Source Voltage;12V/Gate Charge(Qg);35nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;950mW/RDS(on);26mΩ@4.5V/Reverse Transfer Capacitance (Crss@Vds);320pF/Current - Continuous Drain(Id);5A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;2.85nF/Output Capacitance(Coss);350pF


    12V 26mΩ@4.5V 1 P-Channel 950mW TSMT6(SC-95) Single FETs, MOSFETs RoHS

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