ROHM-Single FETs, MOSFETs-RQ6C065BCTCR

Description

Drain to Source Voltage;20V/Gate Charge(Qg);22nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;1.25W/RDS(on);21mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);260pF/Current - Continuous Drain(Id);6.5A/Gate Threshold Voltage (Vgs(th));1.2V/Ciss-Input Capacitance;1.52nF


P-Channel 20V 6.5A 1.25W Surface Mount SC-95

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Drain to Source Voltage;20V/Gate Charge(Qg);22nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;1.25W/RDS(on);21mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);260pF/Current - Continuous Drain(Id);6.5A/Gate Threshold Voltage (Vgs(th));1.2V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;20V/Gate Charge(Qg);22nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;1.25W/RDS(on);21mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);260pF/Current - Continuous Drain(Id);6.5A/Gate Threshold Voltage (Vgs(th));1.2V/Ciss-Input Capacitance;1.52nF


    P-Channel 20V 6.5A 1.25W Surface Mount SC-95

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