ROHM-Single FETs, MOSFETs-RQ6E050AJTCR

Description

Drain to Source Voltage;30V/Gate Charge(Qg);4.7nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;950mW/RDS(on);35mΩ@4.5V/Current - Continuous Drain(Id);5A/Gate Threshold Voltage (Vgs(th));1.5V/Ciss-Input Capacitance;520pF


30V 35mΩ@4.5V 1 N-channel 950mW TSMT6(SC-95) Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);4.7nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;950mW/RDS(on);35mΩ@4.5V/Current - Continuous Drain(Id);5A/Gate Threshold Voltage (Vgs(th));1.5V/Ciss-Input Capacitance;520pF30V 35mΩ@4.5V 1 N-channel 950mW... Read more

$4.71 Excl. VAT

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);4.7nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;950mW/RDS(on);35mΩ@4.5V/Current - Continuous Drain(Id);5A/Gate Threshold Voltage (Vgs(th));1.5V/Ciss-Input Capacitance;520pF


    30V 35mΩ@4.5V 1 N-channel 950mW TSMT6(SC-95) Single FETs, MOSFETs RoHS

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