ROHM-Single FETs, MOSFETs-RQ7E110AJTCR

Description

Drain to Source Voltage;30V/Gate Charge(Qg);22nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;1.5W/RDS(on);9mΩ@11V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);11A/Gate Threshold Voltage (Vgs(th));1.5V/Ciss-Input Capacitance;2.41nF


N-Channel 30V 11A 1.5W Surface Mount TSMT8

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);22nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;1.5W/RDS(on);9mΩ@11V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);11A/Gate Threshold Voltage (Vgs(th));1.5V/Ciss-Input Capacitance;2.41nFN-Channel 30V 11A... Read more

$1.38 Excl. VAT

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);22nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;1.5W/RDS(on);9mΩ@11V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);11A/Gate Threshold Voltage (Vgs(th));1.5V/Ciss-Input Capacitance;2.41nF


    N-Channel 30V 11A 1.5W Surface Mount TSMT8

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