ROHM-Single FETs, MOSFETs-RS1G300GNTB

Description

Drain to Source Voltage;40V/Gate Charge(Qg);56.8nC@10V/Number;1 N-channel/Pd - Power Dissipation;3W;35W/RDS(on);2.5mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);30A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;4.23nF


40V 2.5mΩ@10V 1 N-channel HSOP-8 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;40V/Gate Charge(Qg);56.8nC@10V/Number;1 N-channel/Pd - Power Dissipation;3W;35W/RDS(on);2.5mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);30A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;4.23nF40V 2.5mΩ@10V 1... Read more

$6.12 Excl. VAT

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    Description

    Drain to Source Voltage;40V/Gate Charge(Qg);56.8nC@10V/Number;1 N-channel/Pd - Power Dissipation;3W;35W/RDS(on);2.5mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);30A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;4.23nF


    40V 2.5mΩ@10V 1 N-channel HSOP-8 Single FETs, MOSFETs RoHS

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