ROHM-Single FETs, MOSFETs-RSR010N10TL

Description

Drain to Source Voltage;100V/Gate Charge(Qg);3.5nC@10V/Number;1 N-channel/Pd - Power Dissipation;1W/RDS(on);520mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);12pF/Current - Continuous Drain(Id);1A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;140pF


N-Channel 100V 1A 1W Surface Mount SOT-346T

Product form

Drain to Source Voltage;100V/Gate Charge(Qg);3.5nC@10V/Number;1 N-channel/Pd - Power Dissipation;1W/RDS(on);520mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);12pF/Current - Continuous Drain(Id);1A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;100V/Gate Charge(Qg);3.5nC@10V/Number;1 N-channel/Pd - Power Dissipation;1W/RDS(on);520mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);12pF/Current - Continuous Drain(Id);1A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;140pF


    N-Channel 100V 1A 1W Surface Mount SOT-346T

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