ROHM-Single FETs, MOSFETs-RT1E050RPTR

Description

Drain to Source Voltage;30V/Gate Charge(Qg);13nC/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;1.25W/RDS(on);26mΩ@10V/Reverse Transfer Capacitance (Crss@Vds);160pF/Current - Continuous Drain(Id);5A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;1.3nF/Output Capacitance(Coss);180pF


P-Channel TSST-8

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);13nC/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;1.25W/RDS(on);26mΩ@10V/Reverse Transfer Capacitance (Crss@Vds);160pF/Current - Continuous Drain(Id);5A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;1.3nF/Output Capacitance(Coss);180pFP-Channel... Read more

$0.78 Excl. VAT

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);13nC/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;1.25W/RDS(on);26mΩ@10V/Reverse Transfer Capacitance (Crss@Vds);160pF/Current - Continuous Drain(Id);5A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;1.3nF/Output Capacitance(Coss);180pF


    P-Channel TSST-8

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