Samwin-Single FETs, MOSFETs-SWI069R06VT

Description

Drain to Source Voltage;60V/Gate Charge(Qg);83nC@10V/Number;1 N-channel/Pd - Power Dissipation;114W/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);354pF/Current - Continuous Drain(Id);60A/Gate Threshold Voltage (Vgs(th));1.4V/Ciss-Input Capacitance;3.85nF


60V 60A 114W Through Hole TO-251

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);83nC@10V/Number;1 N-channel/Pd - Power Dissipation;114W/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);354pF/Current - Continuous Drain(Id);60A/Gate Threshold Voltage (Vgs(th));1.4V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);83nC@10V/Number;1 N-channel/Pd - Power Dissipation;114W/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);354pF/Current - Continuous Drain(Id);60A/Gate Threshold Voltage (Vgs(th));1.4V/Ciss-Input Capacitance;3.85nF


    60V 60A 114W Through Hole TO-251

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