Samwin-Single FETs, MOSFETs-SWI069R10VS

Description

Drain to Source Voltage;100V/Gate Charge(Qg);45nC@10V/Number;1 N-channel/Pd - Power Dissipation;158W/RDS(on);7.1mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);11pF/Current - Continuous Drain(Id);70A/Gate Threshold Voltage (Vgs(th));1.5V/Ciss-Input Capacitance;3.041nF


100V 70A 158W Through Hole TO-251

Product form

Drain to Source Voltage;100V/Gate Charge(Qg);45nC@10V/Number;1 N-channel/Pd - Power Dissipation;158W/RDS(on);7.1mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);11pF/Current - Continuous Drain(Id);70A/Gate Threshold Voltage (Vgs(th));1.5V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;100V/Gate Charge(Qg);45nC@10V/Number;1 N-channel/Pd - Power Dissipation;158W/RDS(on);7.1mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);11pF/Current - Continuous Drain(Id);70A/Gate Threshold Voltage (Vgs(th));1.5V/Ciss-Input Capacitance;3.041nF


    100V 70A 158W Through Hole TO-251

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