Samwin-Single FETs, MOSFETs-SWN2N70D

Description

Drain to Source Voltage;700V/Gate Charge(Qg);11nC@10V/Number;1 N-channel/Pd - Power Dissipation;83.3W/RDS(on);5Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);13pF/Current - Continuous Drain(Id);2A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;360pF


700V 2A 83.3W Through Hole TO-251N

Product form

Drain to Source Voltage;700V/Gate Charge(Qg);11nC@10V/Number;1 N-channel/Pd - Power Dissipation;83.3W/RDS(on);5Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);13pF/Current - Continuous Drain(Id);2A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;700V/Gate Charge(Qg);11nC@10V/Number;1 N-channel/Pd - Power Dissipation;83.3W/RDS(on);5Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);13pF/Current - Continuous Drain(Id);2A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;360pF


    700V 2A 83.3W Through Hole TO-251N

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